solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number / ordering information 1 / sff4393a2 __ __ screening 2 / __ = not screened tx = tx level txv = txv level s = s level package 3 / gw = gullwing SFF4393A2GW dual microminiature package 50 ma 40 volts dual n-channel jfet transistor features: ? low on resistance ? low capacitance, < 4 pf ? fast switching, t on < 5 ns ? used for analog switches, choppers, current limiters, and sample-and-hold applications ? tx, txv, and s-level screening available. cons ult factory. maximum ratings symbol value units drain ? source voltage v ds 40 volts drain ? gate voltage v dg 40 volts reverse gate ? source voltage v sg 40 volts drain current i d 50 ma power dissipation @ t a = 25 o c per device total p d 500 660 mw mw maximum thermal resistance junction to ambient r ja 5 / 245 oc/w lead temperature (1/16? from the seated surface for 60 seconds) t l 300 oc operating & storage temperature t op & t stg -65 to +200 oc package outline: gullwing (gw) pin 1 pin 4 pin 6 pin 3 pin 1 pin 4 pin 6 pin 3 ssdi .193 . 015.010 .040 .010 .350 .01 0 6x r.0 10 .033 3x .015 .010 .107 .130 2x .050 (=.1 00) 6x .030 .107 .034 .125 6x .010 .025 5x r .018 .015 .035 note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: ft 0010b doc
electrical characteristics 4 / symbol min max units gate ? source breakdown voltage i g = -1a, v ds = 0 v bv gss -40 ?? volts static, drain ? source on state resistance i d = 1 ma, v gs = 0 v r ds(on) 100 ohms gate to source cutoff voltage v ds = 20 v, i d = 1 na v gs(off) -0.5 -3.0 volts gate to source leakage current v gs = -20 v, v ds = 0 v v dg = -20 v, v ds = 0 v, t a = 150oc i gss -100 -200 pa na zero gate voltage drain current v ds = 20 v, v gs = 0 v i dss 35 ma drain cutoff current v ds = 20 v, v gs = -5 v v ds = 20 v, v gs = -5 v, t a = 150oc i d(off ) 100 200 pa na gate to source forward voltage i g = 1 ma, v ds = 0 v v gs(f) 1.2 volts drain to source ?on? voltage i d = 3.0 ma, v gs = 0 v v ds(on) 0.4 volts small signal, drain ? source on resistance v gs = 0 v, i d = 0 a, f = 1 khz r ds(on) 100 ohms small signal, common-source, short- circuit input capacitance v ds = 20 v, v gs = 0 v, f = 1 mhz c iss ?? 16 pf small signal, common-source, short- circuit reverse transfer capacitance v ds = 0 v, v gs = -5 v, f = 1 mhz c rss ?? 4.5 pf turn on delay time t d (on) ?? 15 ns rise time v dd = 10 v, v gs (on) = 0 v, i d (on) = 3.0 ma, v gs (off) = -5 v t r ?? 5 ns turn off delay time t d (off) ?? 50 ns fall time v dd = 10 v, v gs (on) = 0 v, i d (on) = 3.0 ma, v gs (off) = -5 v t f ?? 30 ns notes: * pulse test: pulse width = 100 sec, duty cycle = 2% 1 / for ordering information, price, and availability contact factory. 2 / screening per mil-prf-19500 3 / for package outlines contact factory. 4 / unless otherwise specified, all electrical characteristics @25oc 5 / mounted on fr1 pcb available part numbers: SFF4393A2GW pin assignment package pin 1 pin 2 pin 3 pin 4 pin 5 pin 6 gullwing gate source drain gate source drain solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF4393A2GW note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: ft 0010b doc
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